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Typical Performance Characteristics
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
100
10
V GS = 15.0 V
10.0 V
8.0 V
7.0 V
6.0 V
5.0 V
100
10
150 C
25 C
-55 C
1
4.5 V
4.0 V
1
o
o
o
2. T C = 25 C
0.1
0.1
1
*Notes:
1. 250 μ s Pulse Test
o
10
20
0.1
2
*Notes:
1. V DS = 20V
2. 250 μ s Pulse Test
4 6
8
V DS , Drain-Source Voltage[V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
0.6
0.5
V GS , Gate-Source Voltage[V]
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
100
150 C
25 C
0.4
0.3
0.2
V GS = 10V
V GS = 20V
10
o
o
*Notes:
*Notes: T C = 25 C
0.1
0
10
20 30
40
o
50
1
0.2
1. V GS = 0V
2. 250 μ s Pulse Test
0.4 0.6 0.8 1.0 1.2 1.4
1.6
I D , Drain Current [A]
Figure 5. Capacitance Characteristics
V SD , Body Diode Forward Voltage [V]
Figure 6. Gate Charge Characteristics
10000
7500
5000
C oss
Ciss = Cgs + Cgd ( Cds = shorted )
Coss = Cds + Cgd
Crss = Cgd
*Notes:
1. V GS = 0V
2. f = 1MHz
10
8
6
V DS = 120V
V DS = 380V
V DS = 480V
4
2500
C iss
2
0
0.1
C rss
1 10 100
600
0
0
*Notes: I D = 8A
10 20 30 40
50
V DS , Drain-Source Voltage [V]
Q g , Total Gate Charge [nC]
?2009 Fairchild Semiconductor Corporation
FCP16N60N / FCPF16N60NT Rev. C1
3
www.fairchildsemi.com
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